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61.
A self-propelled object coupled with an enzyme reaction between urease and urea was investigated at the air/aqueous interface. A plastic object that was fixed to a urease-immobilized filter paper was used as a self-propelled object, termed a urease motor, placed on an aqueous urea solution. The driving force of the urease motor is the difference in the surface tension around the object. Oscillatory motion or no motion was triggered depending on the initial pH of the urea solution. Both the frequency and maximum speed of the oscillatory motion varied depending on the initial pH of the water phase. The mechanisms underlying the oscillatory motion and no motion were discussed in relation to the bell-shaped enzyme activity of urease in the enzyme reaction and the surface tension around the urease motor. 相似文献
62.
Jing Yu Jingwei Han Chuanzhong Li 《Mathematical Methods in the Applied Sciences》2020,43(6):3076-3085
For the orthosymplectic Lie superalgebra , we choose a set of basis matrices. A linear combination of those basis matrices presents a spatial spectral matrix. The compatible condition of the spatial part and the corresponding temporal parts of the spectral problem leads to a generalized super AKNS (GSAKNS) hierarchy. By making use of the supertrace identity, the obtained GSAKNS hierarchy can be written as the super bi-Hamiltonian structures. 相似文献
63.
Nonlinear Dynamics - Oblique collisions are more likely to happen in the realistic translational joint with clearance, compared to the full front impacts. It can be a quite demanding task to... 相似文献
64.
65.
Radiophysics and Quantum Electronics - Wind-related weather hazards remain difficult to recognize targets for weather radars. Methods that use estimates of the width of the reflected-signal... 相似文献
66.
Journal of Thermal Analysis and Calorimetry - A complete analysis of the thermal process about melamine was presented, in which different methods were applied to determine the characteristic of the... 相似文献
67.
Journal of Analytical Chemistry - A review of works in developing optical multisensor systems, a new class of specialized spectroscopic analyzers, is presented. The development and use of such... 相似文献
68.
69.
S.V. Ivanov M.Yu. Chernov V.A. Solovev P.N. Brunkov D.D. Firsov O.S. Komkov 《Progress in Crystal Growth and Characterization of Materials》2019,65(1):20-35
High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ~8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic InxAl1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded InxAl1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As4/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?107 cm?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform. 相似文献
70.
Acta Mathematica Sinica, English Series - We are interested in the existence and asymptotic behavior for the least energy solutions of the following fractional eigenvalue problem $$\left({\rm{P}}... 相似文献